Semiconductor Device and Methods of Forming Same

ABSTRACT

A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

PRIORITY

This application is a continuation of U.S. patent application Ser. No.17/240,432, filed Apr. 26, 2021, entitled “Semiconductor Device andMethods of Forming Same,” which is a continuation of U.S. patentapplication Ser. No. 16/933,325, filed Jul. 20, 2020, now U.S. Pat. No.10,991,826, issued on Apr. 27, 2021, entitled “Semiconductor Device andMethods of Forming Same,” which is a continuation of U.S. patentapplication Ser. No. 16/196,832, filed Nov. 20, 2018, now U.S. Pat. No.10,720,530, issued on Jul. 21, 2020, entitled “Semiconductor Device andMethods of Forming Same,” which claims the benefit of U.S. ProvisionalPatent Application No. 62/737,770 filed Sep. 27, 2018, and entitled“Semiconductor Device and Methods of Forming Same,” which applicationsare incorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view,in accordance with some embodiments.

FIGS. 2, 3, 4, 5, 6, 7, 8A, 8B, 9A, and 9B, are cross-sectional views ofintermediate stages in the manufacturing of FinFETs, in accordance withsome embodiments.

FIG. 10 is a cross-sectional view of forming a recess in thesource/drain region of a fin in an intermediate stage in themanufacturing of FinFETs, in accordance with some embodiments.

FIGS. 11 and 12 are cross-sectional views of forming epitaxialsource/drain regions in intermediate stages in the manufacturing ofFinFETs, in accordance with some embodiments.

FIG. 13 is an illustration of a dopant profile of an epitaxialsource/drain region of a FinFET, in accordance with some embodiments.

FIGS. 14A, 14B, 15A, 15B, 16A, 16B, 17A, 17B, 18A, 18B, 19A, 19B, 20A,and 20B are cross-sectional views of intermediate stages in themanufacturing of FinFETs, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Various embodiments are discussed herein in a particular context,namely, forming epitaxial source/drain regions in an n-type FinFETtransistor. However, various embodiments may be applied to othersemiconductor devices/processes, such as planar transistors. In someembodiments, the epitaxial source/drain regions described hereinincludes a bottom layer of silicon-germanium (SiGe) doped with arsenic(As). In some cases, the presence of Ge allows for an increasedconcentration of activated As dopants. Additionally, the presence of Asin the bottom layer can block other dopants from diffusing into otherregions of the FinFET.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view,in accordance with some embodiments. The FinFET comprises a fin 58 on asubstrate 50 (e.g., a semiconductor substrate). Isolation regions 56 aredisposed in the substrate 50, and the fin 58 protrudes above and frombetween neighboring isolation regions 56. Although the isolation regions56 are described/illustrated as being separate from the substrate 50, asused herein the term “substrate” may be used to refer to just thesemiconductor substrate or a semiconductor substrate inclusive ofisolation regions. A gate dielectric layer 92 is along sidewalls andover a top surface of the fin 58, and a gate electrode 94 is over thegate dielectric layer 92. Source/drain regions 82 are disposed inopposite sides of the fin 58 with respect to the gate dielectric layer92 and gate electrode 94. FIG. 1 further illustrates referencecross-sections that are used in later figures. Cross-section A-A isalong a longitudinal axis of the gate electrode 94 and in a direction,for example perpendicular to the direction of current flow between thesource/drain regions 82 of the FinFET. Cross-section B-B isperpendicular to cross-section A-A and is along a longitudinal axis ofthe fin 58 and in a direction of, for example, a current flow betweenthe source/drain regions 82 of the FinFET. Cross-section C-C is parallelto cross-section A-A and extends through a source/drain region of theFinFET. Subsequent figures refer to these reference cross-sections forclarity.

Some embodiments discussed herein are discussed in the context ofFinFETs formed using a gate-last process. In other embodiments, agate-first process may be used. Also, some embodiments contemplateaspects used in planar devices, such as planar FETs.

FIGS. 2 through 12 and 14A-20B are cross-sectional views of intermediatestages in the manufacturing of FinFETs, in accordance with someembodiments. FIGS. 2 through 12 illustrate reference cross-section A-Aillustrated in FIG. 1 , except for multiple fins/FinFETs. In FIGS. 8Athrough 9B and FIGS. 15A through 20B, figures ending with an “A”designation are illustrated along reference cross-section A-Aillustrated in FIG. 1 , and figures ending with a “B” designation areillustrated along a similar cross-section B-B illustrated in FIG. 1 ,except for multiple fins/FinFETs. FIGS. 14A and 14B are illustratedalong reference cross-section C-C illustrated in FIG. 1 , except formultiple fins/FinFETs.

In FIG. 2 , a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon substrate or a glasssubstrate. Other substrates, such as a multi-layered or gradientsubstrate may also be used. In some embodiments, the semiconductormaterial of the substrate 50 may include silicon; germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof.

Different regions of the substrate 50 can be used be for forming n-typedevices, such as NMOS transistors (e.g., n-type FinFETs) or for formingp-type devices, such as PMOS transistors (e.g., p-type FinFETs). Regionsof the substrate 50 in which n-type devices or p-type devices are formedare respectively referred to herein as “NMOS regions” or “PMOS regions.”FIGS. 2-20B illustrate an NMOS region of the substrate 50, though, asdescribed below, FIGS. 2-10 may also be applicable to PMOS regions ofthe substrate 50. Different regions (e.g., NMOS regions and/or PMOSregions) of the substrate 50 may be physically separated, and any numberof device features (e.g., other active devices, doped regions, isolationstructures, etc.) may be disposed between different regions.

In FIG. 3 , fins 58 are formed in the substrate 50. The fins 58 may be,for example, semiconductor strips. In some embodiments, the fins 58 maybe formed in the substrate 50 by etching trenches in the substrate 50.The etching may be any acceptable etch process, such as a reactive ionetch (RIE), neutral beam etch (NBE), the like, or a combination thereof.The etch may be anisotropic.

The fins may be patterned by any suitable method. For example, the finsmay be patterned using one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers may then be used to pattern thefins.

In FIG. 4 , an insulation material 54 is formed over the substrate 50and between neighboring fins 58. The insulation material 54 may be anoxide, such as silicon oxide, a nitride, the like, or a combinationthereof, and may be formed by a high density plasma chemical vapordeposition (HDP-CVD), a flowable CVD (FCVD) (e.g., a CVD-based materialdeposition in a remote plasma system and post curing to make it convertto another material, such as an oxide), the like, or a combinationthereof. Other insulation materials formed by any acceptable process maybe used. In the illustrated embodiment, the insulation material 54 issilicon oxide formed by a FCVD process. An anneal process may beperformed once the insulation material is formed. In an embodiment, theinsulation material 54 is formed such that excess insulation material 54covers the fins 58.

In FIG. 5 , a planarization process is applied to the insulationmaterial 54. In some embodiments, the planarization process includes achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like. The planarization process exposes the fins 58. Topsurfaces of the fins 58 and the insulation material 54 are level afterthe planarization process is complete.

In FIG. 6 , the insulation material 54 is recessed to form ShallowTrench Isolation (STI) regions 56. The insulation material 54 isrecessed such that fins 58 protrude from between neighboring STI regions56. Further, the top surfaces of the STI regions 56 may have a flatsurface as illustrated, a convex surface, a concave surface (such asdishing), or a combination thereof. The top surfaces of the STI regions56 may be formed flat, convex, and/or concave by an appropriate etch.The STI regions 56 may be recessed using an acceptable etching process,such as one that is selective to the material of the insulation material54.

The process described with respect to FIGS. 2 through 6 is just oneexample of how the fins 58 may be formed. In some embodiments, adielectric layer can be formed over a top surface of the substrate 50;trenches can be etched through the dielectric layer; homoepitaxialstructures can be epitaxially grown in the trenches; and the dielectriclayer can be recessed such that the homoepitaxial structures protrudefrom the dielectric layer to form fins. In some embodiments,heteroepitaxial structures can be used for the fins 58. For example, thefins 58 in FIG. 5 can be recessed, and a material different from thefins 58 may be epitaxially grown in their place. In an even furtherembodiment, a dielectric layer can be formed over a top surface of thesubstrate 50; trenches can be etched through the dielectric layer;heteroepitaxial structures can be epitaxially grown in the trenchesusing a material different from the substrate 50; and the dielectriclayer can be recessed such that the heteroepitaxial structures protrudefrom the dielectric layer to form the fins 58. In some embodiments wherehomoepitaxial or heteroepitaxial structures are epitaxially grown, thegrown materials may be in situ doped during growth, which may obviateprior and subsequent implantations although in situ and implantationdoping may be used together. Still further, it may be advantageous toepitaxially grow a material in an NMOS region different from thematerial in a PMOS region. In various embodiments, the fins 58 may beformed from silicon germanium (Si_(x)Ge_(1-x), where x can be in therange of 0 to 1), silicon carbide, pure or substantially pure germanium,a III-V compound semiconductor, a II-VI compound semiconductor, or thelike. For example, the available materials for forming III-V compoundsemiconductor include, but are not limited to, InAs, AlAs, GaAs, InP,GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, and the like.

Further in FIG. 6 , appropriate wells (not shown) may be formed in thefins 58, and/or the substrate 50. In some embodiments, P-wells may beformed in NMOS regions and N-wells may be formed in one or moredifferent PMOS regions. In the embodiments with different well types,the different implant steps for different regions may be achieved usinga photoresist or other masks (not shown). For example, a photoresist maybe formed over the fins 58 and the STI regions 56. The photoresist isthen patterned to expose another region of the substrate 50, such as oneor more PMOS regions. The photoresist can be formed by using a spin-ontechnique and can be patterned using acceptable photolithographytechniques. Once the photoresist is patterned, an n-type impurityimplant is performed in the PMOS regions, and the photoresist may act asa mask to substantially prevent n-type impurities from being implantedinto other regions, such as the NMOS region shown in FIG. 6 or otherNMOS regions. The n-type impurities may be phosphorus, arsenic, or thelike implanted in the region to a concentration of equal to or less than10¹⁸ cm⁻³, such as between about 10¹⁷ cm⁻³ and about 10¹⁸ cm⁻³. Afterthe implant, the photoresist is removed, such as by an acceptable ashingprocess.

Following the implanting of the PMOS region, a photoresist is formedover the fins 58 and the STI regions 56. The photoresist is patterned toexpose NMOS regions of the substrate 50, such as the NMOS region shownin FIG. 6 or another NMOS region. The photoresist can be formed by usinga spin-on technique and can be patterned using acceptablephotolithography techniques. Once the photoresist is patterned, a p-typeimpurity implant may be performed in the NMOS regions, and thephotoresist may act as a mask to substantially prevent p-type impuritiesfrom being implanted into the PMOS regions. The p-type impurities may beboron, BF₂, or the like implanted in the region to a concentration ofequal to or less than 10¹⁸ cm⁻³, such as between about 10¹⁷ cm⁻³ andabout 10¹⁸ cm⁻³. After the implant, the photoresist may be removed, suchas by an acceptable ashing process.

After the implants, an anneal may be performed to activate the p-typeand/or n-type impurities that were implanted. In some embodiments, thegrown materials of epitaxial fins may be in situ doped during growth,which may obviate the implantations, although in situ and implantationdoping may be used together.

In FIG. 7 , a dummy dielectric layer 60 is formed on the fins 58. Thedummy dielectric layer 60 may be, for example, an oxide (e.g., siliconoxide), a nitride (e.g., silicon nitride), a combination thereof, or thelike, and may be deposited or thermally grown according to acceptabletechniques. A dummy gate layer 62 is formed over the dummy dielectriclayer 60 and the STI regions 56, and a mask layer 64 is formed over thedummy gate layer 62. The dummy gate layer 62 may be deposited over thedummy dielectric layer 60 and then planarized, such as by a CMP. Themask layer 64 may be deposited over the dummy gate layer 62. The dummygate layer 62 may be a conductive material and may be selected from agroup including polycrystalline-silicon (polysilicon), poly-crystallinesilicon-germanium (poly-SiGe), metallic nitrides, metallic silicides,metallic oxides, and metals. In one embodiment, amorphous silicon isdeposited and recrystallized to create polysilicon. The dummy gate layer62 may be deposited by physical vapor deposition (PVD), CVD, sputterdeposition, or other techniques known and used in the art for depositingconductive materials. The dummy gate layer 62 may be made of othermaterials that have a high etching selectivity from the etching ofisolation regions. The mask layer 64 may include, for example, an oxide(e.g., silicon oxide), a nitride (e.g., silicon nitride), SiON, othermaterials, the like, or multilayers thereof. In this example, a singledummy gate layer 62 and a single mask layer 64 are formed across bothNMOS regions and PMOS regions. In some embodiments, separate dummy gatelayers may be formed in NMOS regions and PMOS regions, and separate masklayers may be formed in NMOS regions and PMOS regions.

FIGS. 8A through 16B illustrate various additional steps in themanufacturing of embodiment devices. In FIGS. 8A and 8B, the mask layer64 may be patterned using acceptable photolithography and etchingtechniques to form masks 74. The pattern of the masks 74 then may betransferred to the dummy gate layer 62 and the dummy dielectric layer 60by an acceptable etching technique to form dummy gates 72. The dummygates 72 cover respective channel regions of the fins 58. The pattern ofthe masks 74 may be used to physically separate each of the dummy gates72 from adjacent dummy gates. The dummy gates 72 may also have alengthwise direction substantially perpendicular to the lengthwisedirection of respective epitaxial fins 58.

Further in FIGS. 8A and 8B, gate seal spacers 80 can be formed onexposed surfaces of the dummy gates 72, the masks 74, and/or the fins58. A thermal oxidation or a deposition followed by an anisotropic etchmay form the gate seal spacers 80.

After the formation of the gate seal spacers 80, implants for lightlydoped source/drain (LDD) regions (not explicitly illustrated) may beperformed. In the embodiments with different device types, similar tothe implants discussed above in FIG. 6 , a mask, such as a photoresist,may be formed over a first region, while exposing a second region, andappropriate type (e.g., n-type or p-type) impurities may be implantedinto the exposed fins 58 in the second region. The mask may then beremoved. Subsequently, a mask, such as a photoresist, may be formed overthe second region while exposing the first region, and appropriate typeimpurities may be implanted into the exposed fins 58 in the firstregion. The mask may then be removed. The n-type impurities may be theany of the n-type impurities previously discussed, and the p-typeimpurities may be the any of the p-type impurities previously discussed.The lightly doped source/drain regions may have a concentration ofimpurities of from about 10¹⁵ cm⁻³ to about 10¹⁶ cm⁻³. An anneal may beused to activate the implanted impurities.

In FIGS. 9A and 9B, gate spacers 86 are formed on the gate seal spacers80 along sidewalls of the dummy gates 72 and the masks 74. The gatespacers 86 may be formed by conformally depositing a material andsubsequently anisotropically etching the material. The material of thegate spacers 86 may be silicon nitride, SiCN, a combination thereof, orthe like.

In FIGS. 10-12 , epitaxial source/drain regions 82 are formed in thefins 58 according to some embodiments. FIGS. 10-12 are illustrated alongreference cross-section B-B, and show the formation of an epitaxialsource/drain region 82 in a fin 58 between neighboring dummy gates 72.The epitaxial source/drain regions 82 are formed in the fins 58 suchthat each dummy gate 72 is disposed between respective neighboring pairsof the epitaxial source/drain regions 82. In some embodiments, theepitaxial source/drain regions 82 may extend through the LDD regions. Insome embodiments, the gate seal spacers 80 and gate spacers 86 are usedto separate the epitaxial source/drain regions 82 from the dummy gates72.

During the formation of the epitaxial source/drain regions 82, PMOSregions may be masked by a mask (not shown). Referring first to FIG. 10, a patterning process is performed on the fins 58 to form recesses 81in source/drain regions of the fins 58. The patterning process may beperformed in a manner that the recesses 81 are formed betweenneighboring dummy gate stacks 72 (in interior regions of the fins 58),or between an isolation region 56 and adjacent dummy gate stacks 72 (inend regions of the fins 58). In some embodiments, the patterning processmay include a suitable anisotropic dry etching process, while using thedummy gate stacks 72, the gate spacers 86, and/or isolation regions 56as a combined mask. In some embodiments, the recesses 81 may be formedhaving a vertical depth between about 40 nm and about 80 nm from the topsurface of the fins 58. The suitable anisotropic dry etching process mayinclude a reactive ion etch (RIE), neutral beam etch (NBE), the like, ora combination thereof. In some embodiments where the RIE is used in thefirst patterning process, process parameters such as, for example, aprocess gas mixture, a voltage bias, and an RF power may be chosen suchthat etching is predominantly performed using physical etching, such asion bombardment, rather than chemical etching, such as radical etchingthrough chemical reactions. In some embodiments, a voltage bias may beincreased to increase energy of ions used in the ion bombardment processand, thus, increase a rate of physical etching. Since, the physicaletching in anisotropic in nature and the chemical etching is isotropicin nature, such an etching process has an etch rate in the verticaldirection that is greater than an etch rate in the lateral direction. Insome embodiments, the anisotropic etching process may be performed usinga process gas mixture including CH₃F, CH₄, HBr, O₂, Ar, the like, or acombination thereof. In some embodiments, the patterning process formsrecesses 81 having U-shaped bottom surfaces. The recesses 81 may also bereferred to as U-shaped recesses 81, an example recess 81 of which isshown in FIG. 10 .

FIGS. 11-12 illustrate the formation of an epitaxial source/drain region82 within a recess 81, according to some embodiments. The epitaxialsource/drain regions 82 may include any acceptable material, such asappropriate for n-type FinFETs. In some embodiments, the epitaxialsource/drain regions 82 are formed from multiple epitaxial layers. Insome embodiments, the different epitaxial layers of an epitaxialsource/drain region 82 may have different compositions of semiconductormaterials, different dopants or combinations of dopants, or havedifferent concentrations of one or more dopants. The transitions betweendifferent epitaxial layers of the epitaxial source/drain regions 82 maybe abrupt or gradual. In the embodiment shown in FIG. 12 , the epitaxialsource/drain region 82 is shown including multiple epitaxial layers82A-E, which may be collectively referred to herein as the epitaxialsource/drain region 82. The epitaxial source/drain regions 82 may havesurfaces raised from respective surfaces of the fins 58 and may havefacets. In some embodiments, an anneal process may be performed afterthe epitaxial source/drain regions 82 are formed. In some embodiments,an anneal process may be performed during formation of the epitaxialsource/drain regions 82, for example, after the growth of an epitaxiallayer of an epitaxial source/drain region 82.

Turning to FIG. 11 , a first epitaxial layer 82A is grown in the recess81. In some embodiments, the first epitaxial layer 82A is silicon (Si),and may include other semiconductor materials such as germanium (Ge),dopants such as gallium (Ga), carbon (C), arsenic (As), or phosphorous(P), or other materials. For example, the first epitaxial layer 82A mayinclude a composition of Si_(1-x)Ge_(x), where x indicates the atomicfraction of Ge, and which may or may not be uniform throughout the firstepitaxial layer 82A. The atomic fraction x may be between about 0.001and about 0.05, such as about 0.005, in some embodiments. In some cases,incorporating Ge within the first epitaxial layer 82A may increase thesolid solubility of dopants (e.g., P, As, etc.) within the firstepitaxial layer 82A, thus allowing for a higher concentration ofactivated dopants (described in greater detail below). In someembodiments, the concentration profiles of As, P, or other dopants arenot uniform throughout the first epitaxial layer 82A. For example,portions of the first epitaxial layer 82A that are farther from thesidewalls of the recess 81 (i.e., near the top surface “TS”) may have ahigher concentration of P than portions of the first epitaxial layer 82Athat are closer to the sidewalls of the recess 81 (i.e, near the bottomsurface “BS”). As another example, the concentration profile of As maybe greatest within the first epitaxial layer 82A and away from both thetop surface (“TS”) and the bottom surface (“BS”). These are examples,and other dopant concentration profiles are possible in otherembodiments.

The first epitaxial layer 82A may be grown as a layer covering thesurfaces of the recess 81 (e.g., conformally) and may have a thicknesson the surfaces of the recess 81 between about 0.5 nm and about 15 nm.In some embodiments, the first epitaxial layer 82A may be grown asmultiple epitaxial sublayers. For example, the first epitaxial layer 82Amay be grown sequentially as a first sublayer, a second sublayer, and athird sublayer. The first sublayer may be SiGe doped with As that isbetween about 0.5 nm and about 10 nm thick. The first sublayer may begrown having an atomic concentration of Ge between about 0.1% and about5%, and having a concentration of As between about 1E20 cm⁻³ and about1E21 cm⁻³. In some cases, the first sublayer is grown without explicitlyincorporating P, though P may subsequently diffuse into the firstsublayer, described below. The second sublayer may be SiGe doped with Asand P that is between about 1 nm and about 10 nm thick. The secondsublayer may be grown having an atomic concentration of Ge between about0.1% and about 5%, having a concentration of As between about 1E20 cm⁻³and about 1E21 cm⁻³, and having a concentration of P between about 1E20cm⁻³ and about 1E21 cm⁻³. The third sublayer may be Si doped with P thatis between about 1 nm and about 10 nm thick. The third sublayer may begrown having a concentration of P between about 1E20 cm⁻³ and about 2E21cm⁻³. These are examples, and the first epitaxial layer 82A may havemore sublayers, fewer sublayers, or sublayers having differentcompositions, thicknesses, or properties in other embodiments. In somecases, dopants of other sublayers or epitaxial layers may diffuse suchthat a sublayer may contain a nonzero concentration of one or moredopants that were not explicitly incorporated during the growth of thatsublayer.

In some embodiments, the first epitaxial layer 82A is formed with thedopants (e.g., Ge, As, P, etc.) introduced in-situ during growth. Insome embodiments, the dopant concentration profiles of the dopants maybe controlled by controlling the amounts of dopant introduced duringgrowth of the first epitaxial layer 82A. For example, the firstepitaxial layer 82A may be formed as SiGe having the greatestconcentration of Ge approximately coinciding with the greatestconcentration of As. In some embodiments, the first epitaxial layer 82Ais grown as undoped Si within the recess 81, and then species such asGe, Ga, As and/or P are implanted into the first epitaxial layer 82A. Insome embodiments, no Si is grown, and the species are implanted into theexposed surfaces of the recess 81. An anneal process may be performedafter implantation to activate the implanted species.

Incorporating Ge into the material of the first epitaxial layer 82A mayachieve advantages. For example, the presence of Ge in Si can increasethe amount of dopants such as As or P that are activated during ananneal process. Atoms of Ge are larger than atoms of Si, and thusvacancies in SiGe may be larger than vacancies in Si. The availabilityof larger vacancies can allow for dopants such as As or P to more easilymigrate into a vacancy site and become an active dopant during an annealprocess. Thus, the presence of Ge can improve the solid solubility ofdopants such as As or P. In this manner, the active dopant concentrationof an epitaxial layer (such as the first epitaxial layer 82A) can beincreased. In some embodiments, Ga may be used instead of or in additionto Ge to improve the solid solubility of dopants.

Additionally, the presence of As within the first epitaxial layer 82Acan block some P atoms from diffusing into the first epitaxial layer82A. By doping the first epitaxial layer with As, the amount of P atomsthat are able to diffuse through the first epitaxial layer 82A can bereduced. The diffusing P atoms may be, for example, from P-dopedepitaxial layers formed over the first epitaxial layer 82A, such as oneor more of epitaxial layers 82B-E, described below. In some cases, Patoms that have diffused into the fins 58 can degrade deviceperformance, such as by worsening the short channel effect. In thismanner, the use of As in the first epitaxial layer 82A can improvedevice performance by reducing diffusion of dopants (e.g., P atoms) intothe fins 58. As described, the use of Ge with As can increase theconcentration of As, and thus the presence of Ge with As can enhance thediffusion-blocking properties of the first epitaxial layer 82A.

Turning to FIG. 12 , additional epitaxial layers 82B-E of the epitaxialsource/drain region 82 are formed according to an embodiment. Theepitaxial layers 82B-E may be formed using a single epitaxial process orusing separate epitaxial processes. The epitaxial layers 82B-E shown areillustrative examples, and in other embodiments the epitaxialsource/drain region 82 may have more epitaxial layers, fewer epitaxiallayers, or epitaxial layers with different compositions, thicknesses, orother properties than described in FIG. 12 . The epitaxial layers 82B-Emay have different shapes than those shown in FIG. 12 . These and othervariations are within the scope of this disclosure.

In some embodiments, a second epitaxial layer 82B may be formed over thefirst epitaxial layer 82A. The second epitaxial layer 82B may, forexample, be a layer of Si doped with P that has a vertical thicknessbetween about 5 nm and about 30 nm. In some embodiments, the secondepitaxial layer 82B may be grown having a concentration of P betweenabout 1E20 cm⁻³ and about 3E21 cm⁻³. In some embodiments, the secondepitaxial layer 82B may have a different thickness or include differentdopants or concentrations of dopants.

In some embodiments, a third epitaxial layer 82C may be formed over thesecond epitaxial layer 82B. The third epitaxial layer 82C may, forexample, be a layer of SiGe doped with P that has a vertical thicknessbetween about 5 nm and about 30 nm. The third epitaxial layer 82C may begrown having an atomic concentration of Ge between about 0.1% and about5%. In some embodiments, the third epitaxial layer 82C may be grownhaving a concentration of P between about 5E20 cm⁻³ and about 5E21 cm⁻³.In some cases, incorporating Ge within the third epitaxial layer 82C mayincrease the solid solubility of dopants (e.g., P, As, etc.) within thethird epitaxial layer 82C, thus allowing for a higher concentration ofactivated dopants (described in greater detail below). In some cases,incorporating Ge within the third epitaxial layer 82C may allow forimproved control of stress imparted on the fins 58 by the epitaxialsource/drain region 82. In some embodiments, the third epitaxial layer82C may have a different thickness or include different dopants orconcentrations of dopants. In some embodiments, the third epitaxiallayer 82C may have a different shape, such as having surfaces that taperto a point at the bottom of the third epitaxial layer 82C.

In some embodiments, a fourth epitaxial layer 82D may be formed over thethird epitaxial layer 82C. The fourth epitaxial layer 82D may, forexample, be a layer of Si doped with P that has a vertical thicknessbetween about 5 nm and about 30 nm. In some embodiments, the fourthepitaxial layer 82D may be grown having a concentration of P betweenabout 5E20 cm⁻³ and about 5E21 cm⁻³. In some embodiments, the fourthepitaxial layer 82D may have a different thickness or include differentdopants or concentrations of dopants.

In some embodiments, a fifth epitaxial layer 82E may be formed over thefourth epitaxial layer 82D. The fifth epitaxial layer 82E may be, forexample, a layer of SiGe doped with P that has a vertical thicknessbetween about 1 nm and about 5 nm. The fifth epitaxial layer 82E may begrown having an atomic concentration of Ge between about 0.1% and about5%. In some embodiments, the fifth epitaxial layer 82E may be grownhaving a concentration of P between about 5E20 cm⁻³ and about 2E21 cm⁻³.In some embodiments, fifth epitaxial layer 82E may include C as a dopantwith or without P. In some embodiments, fifth epitaxial layer 82E may begrown as Si (without Ge). In some cases, incorporating Ge within thefifth epitaxial layer 82E may improve source/drain contacts 112 to theepitaxial source/drain region 82A, discussed below in FIGS. 20A-B. Insome embodiments, the fifth epitaxial layer 82E may have a differentthickness or include different dopants or concentrations of dopants.

FIG. 13 is an illustration of example dopant concentration profiles ofan epitaxial source/drain region, which may be similar to the epitaxialsource/drain region 82 described previously. FIG. 13 shows theconcentration of dopants (logarithmic scale, arbitrary units) in asilicon epitaxial source/drain region on the Y-axis and the depth(arbitrary units) into the epitaxial source/drain region on the X-axis.Curve 130 shows a concentration profile of Ge, curve 132 shows aconcentration profile of As, and curve 134 shows a concentration profileof P. The depth into the epitaxial source/drain region is measured in avertical direction from the top surface of the epitaxial source/drainregion toward the bottom surface of the epitaxial source/drain region.For example, the depth may be measured as indicated by “D” in FIG. 12for the epitaxial source/drain region 82. The epitaxial layers 82A-E arealso indicated in FIG. 13 , though the indications of the epitaxiallayers 82A-E are approximate and intended to be illustrative. In otherembodiments, epitaxial layers such as epitaxial layers 82A-E may be atdifferent depths or have different relative sizes. In some embodiments,other dopants than those shown in FIG. 13 or different dopants thanthose shown in FIG. 13 may be present, and dopants may have differentconcentrations or different concentration profiles.

As shown in FIG. 13 , the first epitaxial layer 82A includes Ge, As, andP dopants. The Ge and As dopants each have a maximum local concentrationwithin the interior of the first epitaxial layer 82A. The concentrationof P within the first epitaxial layer 82A decreases with increasingdepth. The second epitaxial layer 82B includes P, with relatively littleGe or As. The second epitaxial layer 82B has a relatively uniformconcentration of P, but in some cases the concentration of P maydecrease with increasing depth. The third epitaxial layer 82C includesGe and P. The concentration of Ge has a maximum local concentrationwithin the interior of the third epitaxial layer 82C. In some cases, themaximum concentration of Ge within the third epitaxial layer 82C may begreater than the maximum concentration of Ge within the first epitaxiallayer 82A. The concentration of P within the third epitaxial layer 82Cmay be greater than the concentration of P within the second epitaxiallayer 82B. In some cases, the greatest concentration of P within theepitaxial source/drain region 82 may be within the third epitaxialregion 82C. The fourth epitaxial layer 82D includes P, with relativelylittle Ge. The concentration of P within the fourth epitaxial layer 82Dmay be greater than the concentration of P within the second epitaxiallayer 82B, and may be less than the concentration of P within the thirdepitaxial layer 82C. In some cases, the concentration of P within thefourth epitaxial layer 82E may increase with increasing depth. The fifthepitaxial layer 82E includes Ge and P. The concentration of P in thefifth epitaxial layer 82E may be less than that of one or more of theother epitaxial layers 82A-D. The concentration of Ge in the fifthepitaxial layer 82E may be less than that of the epitaxial layers 82A or82C.

As a result of the epitaxy processes used to form the epitaxialsource/drain regions 82, upper surfaces of the epitaxial source/drainregions 82 may have facets which expand laterally outward beyondsidewalls of the fins 58. In some embodiments, these facets causeadjacent source/drain regions 82 of a FinFET to merge as illustrated byFIG. 14A. In other embodiments, adjacent source/drain regions 82 remainseparated after the epitaxy process is completed as illustrated by FIG.14B.

After forming the epitaxial source/drain regions 82, epitaxialsource/drain regions may be formed in a PMOS region of the substrate 50(not shown). The epitaxial source/drain regions may be formed by maskingthe NMOS region and the fins 58 in the PMOS region are etched to formrecesses in the fins 58. Then, the epitaxial source/drain regions in thePMOS region are epitaxially grown in the recesses. The epitaxialsource/drain regions in the PMOS region may include any acceptablematerial, such as appropriate for p-type FinFETs. For example, if thefin 58 is silicon, the epitaxial source/drain regions in the PMOS regionmay include SiGe, SiGeB, Ge, GeSn, or the like. The epitaxialsource/drain regions in the PMOS region may also have surfaces raisedfrom respective surfaces of the fins 58 and may have facets, or bemerged. In some embodiments, epitaxial source/drain regions are formedin the PMOS region before forming the epitaxial source/drain regions 82in the NMOS region.

In FIGS. 15A-B, an ILD 88 is deposited over the structure illustrated inFIGS. 12 and 14A-B. The ILD 88 may be formed of a dielectric material ora semiconductor material, and may be deposited by any suitable method,such as CVD, plasma-enhanced CVD (PECVD), or FCVD. Dielectric materialsmay include Phospho-Silicate Glass (PSG), Boro-Silicate Glass (BSG),Boron-Doped Phospho-Silicate Glass (BPSG), undoped Silicate Glass (USG),or the like. Semiconductor materials may include amorphous Si, SiGe, Ge,or the like. Other insulation or semiconductor materials formed by anyacceptable process may be used. In some embodiments, a contact etch stoplayer (CESL) 87 is disposed between the ILD 88 and the epitaxialsource/drain regions 82, the hard mask 74, and the gate spacers 86. TheCESL 87 may include a dielectric material, such as, SiN, SiO, SiON, thelike, or a combination.

In FIGS. 16A and 16B, a planarization process, such as a CMP, may beperformed to level the top surface of the ILD 88 with the top surfacesof the dummy gates 72. The planarization process may also remove themasks 74 on the dummy gates 72, and portions of the gate seal spacers 80and the gate spacers 86 along sidewalls of the masks 74. After theplanarization process, top surfaces of the dummy gates 72, the gate sealspacers 80, the gate spacers 86, and the ILD 88 are level. Accordingly,the top surfaces of the dummy gates 72 are exposed through the ILD 88.

In FIGS. 17A and 17B, the dummy gates 72 and portions of the dummydielectric layer 60 directly underlying the exposed dummy gates 72 areremoved in an etching step(s), so that recesses 90 are formed. In someembodiments, the dummy gates 72 are removed by an anisotropic dry etchprocess. For example, the etching process may include a dry etch processusing reaction gas(es) that selectively etch the dummy gates 72 withoutetching the ILD 88 or the gate spacers 86. Each recess 90 exposes achannel region of a respective fin 58. Each channel region is disposedbetween neighboring pairs of the epitaxial source/drain regions 82.During the removal, the dummy dielectric layer 60 may be used as an etchstop layer when the dummy gates 72 are etched. The dummy dielectriclayer 60 may then be removed after the removal of the dummy gates 72.

In FIGS. 18A and 18B, gate dielectric layers 92 and gate electrodes 94are formed for replacement gates. Gate dielectric layers 92 aredeposited conformally in the recesses 90, such as on the top surfacesand the sidewalls of the fins 58 and on sidewalls of the gate sealspacers 80/gate spacers 86. The gate dielectric layers 92 may also beformed on top surface of the ILD 88. In accordance with someembodiments, the gate dielectric layers 92 include SiO, SiN, the like,or multilayers thereof. In some embodiments, the gate dielectric layers92 are a high-k dielectric material, and in these embodiments, the gatedielectric layers 92 may have a k value greater than about 7.0, and mayinclude a metal oxide or a silicate of Hf, Al, Zr, La, Mg, Ba, Ti, Pb,the like, or combinations thereof. The formation methods of the gatedielectric layers 92 may include Molecular-Beam Deposition (MBD), ALD,PECVD, or the like.

The gate electrodes 94 are deposited over the gate dielectric layers 92,respectively, and fill the remaining portions of the recesses 90. Thegate electrodes 94 may include a metal-containing material such as TiN,TaN, TaC, Co, Ru, Al, combinations thereof, or multi-layers thereof. Forexample, although a single gate electrode 94 is illustrated, any numberof work function tuning layers may be deposited in the recesses 90.After the filling of the gate electrodes 94, a planarization process,such as a CMP, may be performed to remove the excess portions of thegate dielectric layers 92 and the material of the gate electrodes 94,which excess portions are over the top surface of the ILD 88. Theremaining portions of material of the gate electrodes 94 and the gatedielectric layers 92 thus form replacement gates of the resultingFinFETs. The gate electrodes 94 and the gate dielectric layers 92 may becollectively referred to as a “gate” or a “gate stack.” The gate and thegate stacks may extend along sidewalls of a channel region of the fins58.

The formation of the gate dielectric layers 92 in NMOS regions and PMOSregions may occur simultaneously such that the gate dielectric layers 92in each region are formed from the same materials, and the formation ofthe gate electrodes 94 may occur simultaneously such that the gateelectrodes 94 in each region are formed from the same materials. In someembodiments, the gate dielectric layers 92 in each region may be formedby distinct processes, such that the gate dielectric layers 92 may bedifferent materials, and the gate electrodes 94 in each region may beformed by distinct processes, such that the gate electrodes 94 may bedifferent materials. Various masking steps may be used to mask andexpose appropriate regions when using distinct processes.

In FIGS. 19A-B, an ILD 108 is deposited over the ILD 88. In anembodiment, the ILD 108 is a flowable film formed by a flowable CVDmethod. In some embodiments, the ILD 108 is formed of a dielectricmaterial such as PSG, BSG, BPSG, USG, or the like, and may be depositedby any suitable method, such as CVD, PECVD, or the like.

In FIGS. 20A-B, a gate contact 110 and source/drain contacts 112 areformed through the ILD 108 and the ILD 88. Openings for the source/draincontacts 112 are formed through the ILD 108 and the ILD 88, and openingsfor the gate contacts 110 are formed through the ILD 108. The openingsmay be formed using acceptable photolithography and etching techniques.A liner, such as a diffusion barrier layer, an adhesion layer, or thelike, and a conductive material are formed in the openings. The linermay include titanium, titanium nitride, tantalum, tantalum nitride, thelike, or a combination. The conductive material may be copper, a copperalloy, silver, gold, tungsten, cobalt, aluminum, nickel, the like, or acombination. A planarization process, such as a CMP, may be performed toremove excess material from a surface of the ILD 108. The remainingliner and conductive material form the source/drain contacts 112 andgate contacts 110 in the openings. An anneal process may be performed toform a silicide at the interface between the epitaxial source/drainregions 82 and the source/drain contacts 112. The contact 110 isphysically and electrically connected to the gate electrode 94, and thecontacts 112 are physically and electrically connected to the epitaxialsource/drain regions 82. FIGS. 20A-B illustrate the contacts 110 and 112in a same cross-section; however, in other embodiments, the contacts 110and 112 may be disposed in different cross-sections. Further, thepositions of contacts 110 and 112 shown in FIGS. 20A-B are merelyillustrative and not intended to be limiting in any way. For example,the contact 110 may be vertically aligned with the fin 58 as illustratedor may be disposed at a different location on the gate electrode 94.Furthermore, the contacts 112 may be formed prior to, simultaneouslywith, or after forming the contacts 110.

In accordance with an embodiment, a method includes depositing a dummygate over and along sidewalls of a fin extending upwards from asubstrate, forming a gate spacer along a sidewall of the dummy gate,forming a recess in the fin adjacent the gate spacer, and forming asource/drain region in the recess. The forming of the source/drainregion includes forming a first layer in the recess, the first layerincluding silicon doped with a first concentration of germanium and afirst concentration of a first n-type dopant, and epitaxially growing asecond layer on the first layer, the second layer including silicondoped with a concentration of a second n-type dopant, wherein the secondn-type dopant is different than the first n-type dopant, wherein thesecond layer has a second concentration of germanium that is less thanthe first concentration of germanium, wherein the second layer has asecond concentration of the first n-type dopant that is less than thefirst concentration of the first n-type dopant, and wherein the firstlayer separates the second layer from the fin. In an embodiment, thefirst layer further includes gallium. In an embodiment, the first n-typedopant is arsenic. In an embodiment, the second n-type dopant isphosphorus. In an embodiment, the first layer includes the second n-typedopant, and a first concentration of the second n-type dopant at a topsurface of the first layer is greater than a second concentration of thesecond n-type dopant at a bottom surface of the first layer. In anembodiment, the method further includes epitaxially growing a thirdlayer on the second layer, the third layer having a different materialcomposition than the first layer, the third layer including silicondoped with the second n-type dopant. In an embodiment, the third layerfurther includes germanium. In an embodiment, a concentration of thesecond n-type dopant in the third layer is greater than theconcentration of the second n-type dopant in the second layer. In anembodiment, forming the first layer in the recess includes implantingthe first n-type dopant into sidewalls of the recess.

In accordance with an embodiment, a method includes forming a dummy gateover and along sidewalls of a fin extending upwards from a substrate,forming a gate spacer along a sidewall of the dummy gate,anisotropically etching a recess in the fin adjacent the gate spacer,and epitaxially growing a source/drain region in the recess. Epitaxiallygrowing the source/drain region includes growing a doped silicon layerlining the recess, the first doped silicon layer including a germaniumdopant and a first n-type dopant, and growing a second doped siliconlayer on the first doped silicon layer, the second doped silicon layerincluding a second n-type dopant that is different from the first n-typedopant, wherein a portion of the second doped silicon layer is free ofthe first n-type dopant, and replacing the dummy gate with a functionalgate stack disposed over and along sidewalls of the fin. In anembodiment, the first doped silicon layer includes between 0.5% and 2%germanium. In an embodiment, the first n-type dopant is arsenic and thesecond n-type dopant is phosphorus. In an embodiment, epitaxiallygrowing the source/drain region further includes growing a third dopedsilicon layer on the second doped silicon layer, the third doped siliconlayer including the second n-type dopant. In an embodiment, the thirddoped silicon layer further includes a germanium dopant. In anembodiment, epitaxially growing the source/drain region further includesgrowing a fourth doped silicon layer, wherein the fourth doped siliconlayer includes a first concentration of the second n-type dopant that isgreater than a second concentration of the second n-type dopant in thesecond doped silicon layer.

In accordance with an embodiment, a device includes a fin extending froma substrate, a gate stack over and along sidewalls of the fin, a gatespacer along a sidewall of the gate stack, and an epitaxial source/drainregion in the fin and adjacent the gate spacer. The epitaxialsource/drain region includes a first epitaxial layer on the fin, thefirst epitaxial layer including silicon, germanium, and arsenic, and asecond epitaxial layer on the first epitaxial layer, the secondepitaxial layer including silicon and phosphorus, the first epitaxiallayer separating the second epitaxial layer from the fin. In anembodiment, the epitaxial source/drain region further includes a thirdepitaxial layer on the second epitaxial layer, the third epitaxial layerincluding silicon, germanium, and phosphorus. In an embodiment, theepitaxial source/drain region further includes a fourth epitaxial layeron the third epitaxial layer and further includes a fifth epitaxiallayer on the fourth epitaxial layer, wherein the fourth epitaxial layerincludes silicon and phosphorus, and wherein the fifth epitaxial layerincludes silicon and germanium. In an embodiment, the third epitaxiallayer, the fourth epitaxial layer, and the fifth epitaxial layer have aconcentration of arsenic that is less than that of the first epitaxiallayer. In an embodiment, the first epitaxial layer has an atomicconcentration of germanium in a range from 0.5% to 2%.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a dummy gate overand along sidewalls of a fin extending upwards from a substrate; forminga gate spacer along a sidewall of the dummy gate; etching a recess inthe fin adjacent the gate spacer; epitaxially growing a source/drainregion in the recess, comprising: growing a first doped semiconductorlayer lining the recess, the first doped semiconductor layer comprisinga silicon-containing compound and a first n-type dopant; and growing asecond doped semiconductor layer on the first doped semiconductor layer,the second doped semiconductor layer comprising a second n-type dopantthat is different from the first n-type dopant, wherein a portion of thesecond doped semiconductor layer is free of the first n-type dopant; andreplacing the dummy gate with a gate stack disposed over and alongsidewalls of the fin.
 2. The method of claim 1, wherein thesilicon-containing compound comprises silicon germanium.
 3. The methodof claim 1, wherein a thickness of the first doped semiconductor layeris in a range between 0.5 nm and 15 nm.
 4. The method of claim 1,wherein forming the first doped semiconductor layer comprises: forming afirst sublayer, wherein the first sublayer is doped with As; forming asecond sublayer over the first sublayer, wherein the second sublayer isdoped with P; and forming a third sublayer over the second sublayerdoped with P.
 5. The method of claim 4, wherein P diffuses into an upperportion of the first sublayer.
 6. The method of claim 4, wherein thesecond sublayer is doped with As.
 7. A device comprising: a finextending from a substrate; a gate stack over and along sidewalls of thefin; a gate spacer along a sidewall of the gate stack; and asource/drain region in the fin and adjacent the gate spacer, thesource/drain region comprising: a first epitaxial layer on the fin, thefirst epitaxial layer comprising a first silicon-containingsemiconductor material and a first n-type dopant; a second epitaxiallayer on the first epitaxial layer, the second epitaxial layercomprising a second silicon-containing semiconductor material and asecond n-type dopant, the first silicon-containing semiconductormaterial being different than the second silicon-containing material,the first epitaxial layer separating the second epitaxial layer from thefin; and a third epitaxial layer on the second epitaxial layer, thethird epitaxial layer comprising a third silicon-containingsemiconductor material.
 8. The device of claim 7, wherein the firstn-type dopant comprises As.
 9. The device of claim 7, wherein the firstsilicon-containing semiconductor material comprises silicon germanium.10. The device of claim 7, wherein the first epitaxial layer comprisessilicon, germanium, and arsenic.
 11. The device of claim 7, wherein thesecond epitaxial layer comprises silicon and phosphorus.
 12. The deviceof claim 7, wherein the third epitaxial layer comprises silicon,germanium, and phosphorus.
 13. The device of claim 7, wherein an uppersurface of the second epitaxial layer is lower than an upper surface ofthe first epitaxial layer.
 14. The device of claim 7, wherein an uppersurface of the third epitaxial layer is lower than an upper surface ofthe first epitaxial layer.
 15. A method comprising: depositing a dummygate over and along sidewalls of a fin; forming a gate spacer along asidewall of the dummy gate; forming a recess in the fin adjacent thegate spacer; and forming a source/drain region in the recess, theforming of the source/drain region comprising: forming a first layer inthe recess, the first layer comprising a first silicon-containingmaterial doped with a first concentration of a first n-type dopant; andepitaxially growing a second layer on the first layer, the second layercomprising a second silicon-containing material doped with aconcentration of a second n-type dopant, wherein the second n-typedopant is different than the first n-type dopant, wherein the secondlayer has a second concentration of the first n-type dopant that is lessthan the first concentration of the first n-type dopant, and wherein thefirst layer separates the second layer 82B from the fin.
 16. The methodof claim 15, wherein the first layer and the second layer comprisesilicon and germanium, wherein the first layer has a higherconcentration of germanium than the second layer.
 17. The method ofclaim 15, wherein forming the source/drain region further comprisesepitaxially growing a third layer over the second layer, wherein thethird layer is doped with the second n-type dopant.
 18. The method ofclaim 17, wherein the third layer has an atomic concentration ofgermanium that is greater than that of the second layer.
 19. The methodof claim 15, wherein the first layer further comprises gallium.
 20. Themethod of claim 15, wherein the first n-type dopant is arsenic.